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Silicon carbide compact sintered material with extremely low resistivity
Disclosed is a polycrystalline sintered ceramic material having very low electrical resistivity, comprising, by weight: greater than 95% of silicon carbide (SiC), less than 1.5% of silicon in another form different from SiC, less than 2.5% of carbon in another form different from SiC, less than 1.0% of oxygen (O), less than 0.5% of aluminum (Al), less than 0.5% of elements Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, less than 0.5% of an alkali metal element, and the balance of silicon. -less than 0.5% of an alkaline earth metal,-0.05 to 1% of nitrogen (N),-the total amount of other elements being 100%, the median equivalent diameter of the grains of the above-mentioned material being 0.5 to 5 microns, the mass ratio of SiC alpha (alpha) to SiC beta (beta) being less than 0.1, and the total porosity being less than 15% of the volume of the material.
公开了具有极低电阻率的多晶烧结陶瓷材料，其按重量计包含：‑大于95重量％的碳化硅(SiC)‑小于1.5％的与SiC不同的另一种形式的硅，‑小于2.5％的与SiC不同的另一种形式的碳，‑小于1.0％的氧(O)，‑小于0.5％的铝(Al)，‑小于0.5％的Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb和Lu元素，‑小于0.5％的碱金属元素，‑小于0.5％的碱土金属，‑0.05至1％的氮(N)，‑补足100％的其它元素，其中上述材料的晶粒的中值当量直径为0.5至5微米，SiCα(α)与SiCβ(β)的质量比小于0.1，并且总孔隙率为所述材料的体积的小于15％。
Silicon carbide compact sintered material with extremely low resistivity
Disclosed is a polycrystalline sintered ceramic material having very low electrical resistivity, comprising, by weight: greater than 95% of silicon carbide (SiC), less than 1.5% of silicon in another form different from SiC, less than 2.5% of carbon in another form different from SiC, less than 1.0% of oxygen (O), less than 0.5% of aluminum (Al), less than 0.5% of elements Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, less than 0.5% of an alkali metal element, and the balance of silicon. -less than 0.5% of an alkaline earth metal,-0.05 to 1% of nitrogen (N),-the total amount of other elements being 100%, the median equivalent diameter of the grains of the above-mentioned material being 0.5 to 5 microns, the mass ratio of SiC alpha (alpha) to SiC beta (beta) being less than 0.1, and the total porosity being less than 15% of the volume of the material.
公开了具有极低电阻率的多晶烧结陶瓷材料，其按重量计包含：‑大于95重量％的碳化硅(SiC)‑小于1.5％的与SiC不同的另一种形式的硅，‑小于2.5％的与SiC不同的另一种形式的碳，‑小于1.0％的氧(O)，‑小于0.5％的铝(Al)，‑小于0.5％的Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb和Lu元素，‑小于0.5％的碱金属元素，‑小于0.5％的碱土金属，‑0.05至1％的氮(N)，‑补足100％的其它元素，其中上述材料的晶粒的中值当量直径为0.5至5微米，SiCα(α)与SiCβ(β)的质量比小于0.1，并且总孔隙率为所述材料的体积的小于15％。
Silicon carbide compact sintered material with extremely low resistivity
具有极低电阻率的碳化硅致密烧结材料
MASSO GIUSEPPE (author) / BOUSQUET CHRISTOPHE (author)
2024-02-20
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2024
DENSE SINTERED MATERIAL OF SILICON CARBIDE WITH VERY LOW ELECTRICAL RESISTIVITY
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