A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
PIEZOELECTRIC THIN-FILM ELEMENT, MICROELECTROMECHANICAL SYSTEM, AND ULTRASOUND TRANSDUCER
A piezoelectric thin-film element includes a first electrode layer, a piezoelectric thin film stacked on the first electrode layer, and a second electrode layer stacked on the piezoelectric thin film. A performance index P of the piezoelectric thin film is defined as (d33,f)2×Y/ε. d33,f is a piezoelectric strain constant of thickness longitudinal vibration of the piezoelectric thin film. Y is a Young's modulus of the piezoelectric thin film. ε is a permittivity of the piezoelectric thin film. The performance index P is from 10% to 80.1%.
PIEZOELECTRIC THIN-FILM ELEMENT, MICROELECTROMECHANICAL SYSTEM, AND ULTRASOUND TRANSDUCER
A piezoelectric thin-film element includes a first electrode layer, a piezoelectric thin film stacked on the first electrode layer, and a second electrode layer stacked on the piezoelectric thin film. A performance index P of the piezoelectric thin film is defined as (d33,f)2×Y/ε. d33,f is a piezoelectric strain constant of thickness longitudinal vibration of the piezoelectric thin film. Y is a Young's modulus of the piezoelectric thin film. ε is a permittivity of the piezoelectric thin film. The performance index P is from 10% to 80.1%.
PIEZOELECTRIC THIN-FILM ELEMENT, MICROELECTROMECHANICAL SYSTEM, AND ULTRASOUND TRANSDUCER
SATO YUSUKE (author)
2024-07-04
Patent
Electronic Resource
English
Piezoelectric aluminum nitride thin films for microelectromechanical systems
| British Library Online Contents | 2012
| European Patent Office | 2016