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INERT ATMOSPHERE SINTERING OF ELECTROCHEMICAL CELL STACK INTERCONNECTS
A method of forming a protective layer on an interconnect for an electrochemical cell stack includes coating at least one side of the interconnect with a metal oxide powder to form a protective layer, sintering the coated interconnect in an inert atmosphere to at least partially reduce the protective layer, and oxidizing the sintered interconnect in an oxidizing atmosphere to oxidize and densify the protective layer.
INERT ATMOSPHERE SINTERING OF ELECTROCHEMICAL CELL STACK INTERCONNECTS
A method of forming a protective layer on an interconnect for an electrochemical cell stack includes coating at least one side of the interconnect with a metal oxide powder to form a protective layer, sintering the coated interconnect in an inert atmosphere to at least partially reduce the protective layer, and oxidizing the sintered interconnect in an oxidizing atmosphere to oxidize and densify the protective layer.
INERT ATMOSPHERE SINTERING OF ELECTROCHEMICAL CELL STACK INTERCONNECTS
LU ZIGUI (author) / XIAO GUOLIANG (author) / ARMSTRONG TAD (author) / PAN KEJI (author) / BYRD ADAM (author)
2024-10-17
Patent
Electronic Resource
English