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Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.
Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m2/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100° C./min in a temperature range from 1,000 to 1,400° C. while flowing the compound by a continuous firing furnace.
Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
SHIBATA KOJI (author) / OHMARU TAKUJI (author) / YAMAO TAKESHI (author) / FUJINAGA MASATAKA (author) / HONDA MICHIO (author) / FUJII TAKAYUKI (author)
2015-07-21
Patent
Electronic Resource
English
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