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    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    New search for: MIKI AYA
    New search for: MORITA SHINYA
    New search for: KUGIMIYA TOSHIHIRO
    New search for: YASUNO SATOSHI
    New search for: PARK JAE WOO
    New search for: LEE JE HUN
    New search for: AHN BYUNG DU
    New search for: KIM GUN HEE

    This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

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    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    New search for: MIKI AYA
    New search for: MORITA SHINYA
    New search for: KUGIMIYA TOSHIHIRO
    New search for: YASUNO SATOSHI
    New search for: PARK JAE WOO
    New search for: LEE JE HUN
    New search for: AHN BYUNG DU
    New search for: KIM GUN HEE

    This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

    Access

    Download

    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    New search for: MIKI AYA
    New search for: MORITA SHINYA
    New search for: KUGIMIYA TOSHIHIRO
    New search for: YASUNO SATOSHI
    New search for: PARK JAE WOO
    New search for: LEE JE HUN
    New search for: AHN BYUNG DU
    New search for: KIM GUN HEE

    This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

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    Title:

    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    Contributors:

    MIKI AYA (author) / MORITA SHINYA (author) / KUGIMIYA TOSHIHIRO (author) / YASUNO SATOSHI (author) / PARK JAE WOO (author) / LEE JE HUN (author) / AHN BYUNG DU (author) / KIM GUN HEE (author)

    Publication date:

    2015-11-03

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    English

    Classification:

    IPC:  C01G Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle , COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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