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    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    Neue Suche nach: MIKI AYA
    Neue Suche nach: MORITA SHINYA
    Neue Suche nach: KUGIMIYA TOSHIHIRO
    Neue Suche nach: YASUNO SATOSHI
    Neue Suche nach: PARK JAE WOO
    Neue Suche nach: LEE JE HUN
    Neue Suche nach: AHN BYUNG DU
    Neue Suche nach: KIM GUN HEE

    This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

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    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    Neue Suche nach: MIKI AYA
    Neue Suche nach: MORITA SHINYA
    Neue Suche nach: KUGIMIYA TOSHIHIRO
    Neue Suche nach: YASUNO SATOSHI
    Neue Suche nach: PARK JAE WOO
    Neue Suche nach: LEE JE HUN
    Neue Suche nach: AHN BYUNG DU
    Neue Suche nach: KIM GUN HEE

    This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

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    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    Neue Suche nach: MIKI AYA
    Neue Suche nach: MORITA SHINYA
    Neue Suche nach: KUGIMIYA TOSHIHIRO
    Neue Suche nach: YASUNO SATOSHI
    Neue Suche nach: PARK JAE WOO
    Neue Suche nach: LEE JE HUN
    Neue Suche nach: AHN BYUNG DU
    Neue Suche nach: KIM GUN HEE

    This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

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    Titel:

    Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

    Beteiligte:

    MIKI AYA (Autor:in) / MORITA SHINYA (Autor:in) / KUGIMIYA TOSHIHIRO (Autor:in) / YASUNO SATOSHI (Autor:in) / PARK JAE WOO (Autor:in) / LEE JE HUN (Autor:in) / AHN BYUNG DU (Autor:in) / KIM GUN HEE (Autor:in)

    Erscheinungsdatum:

    03.11.2015

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C01G Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle , COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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