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Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≰1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
MIKI AYA (Autor:in) / MORITA SHINYA (Autor:in) / KUGIMIYA TOSHIHIRO (Autor:in) / YASUNO SATOSHI (Autor:in) / PARK JAE WOO (Autor:in) / LEE JE HUN (Autor:in) / AHN BYUNG DU (Autor:in) / KIM GUN HEE (Autor:in)
03.11.2015
Patent
Elektronische Ressource
Englisch
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