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Method for producing a powdery precursor material, powdery precursor material and use thereof
A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1−y) AlSiN3:X1 II:(CabSraLi1−a−b) AISi (N1−cFc)3:X2 III: Z5−δAl4−2δSi8+2δN18: X3 IV: (Zi−dLid)5−δAl4−2δSi8+2δ(N1−XFX)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.
Method for producing a powdery precursor material, powdery precursor material and use thereof
A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1−y) AlSiN3:X1 II:(CabSraLi1−a−b) AISi (N1−cFc)3:X2 III: Z5−δAl4−2δSi8+2δN18: X3 IV: (Zi−dLid)5−δAl4−2δSi8+2δ(N1−XFX)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.
Method for producing a powdery precursor material, powdery precursor material and use thereof
POHL-KLEIN BIANCA (author) / KECHELE JULIANE (author)
2017-01-03
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
/
C09K
Materialien für Anwendungen, soweit nicht anderweitig vorgesehen
,
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR
/
H01J
Elektrische Entladungsröhren oder Entladungslampen
,
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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