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Zinc oxide sputtering target
Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm3 or greater, the number of the spinel phases per area of 20 counts/100 μm2 or greater, and a spinel phase distribution index of 0.40 or less.
Zinc oxide sputtering target
Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm3 or greater, the number of the spinel phases per area of 20 counts/100 μm2 or greater, and a spinel phase distribution index of 0.40 or less.
Zinc oxide sputtering target
YOSHIKAWA JUN (author) / YAMAGUCHI HIROFUMI (author) / NANATAKI TSUTOMU (author)
2017-11-21
Patent
Electronic Resource
English
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