A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
INDIUM OXIDE-ZINC OXIDE (IZO)-BASED SPUTTERING TARGET
PROBLEM TO BE SOLVED: To provide an indium oxide-zinc oxide (IZO)-based sintering target of which the sintering body has a small warp and which has suppressed in-plane scattering of a bulk resistivity caused by grinding for warp reduction, and a production method thereof.SOLUTION: A sputtering target has an atom ratio of 0.05≤Zn/(In+Zn)≤0.30 and a standard deviation of a bulk resistivity of 0.1 mΩ cm or less in a sputtering plane of the target. A production method of the sputtering target made of an IZO sintering body includes a step for retaining the temperature of a molded body obtained by press-molding raw material powder at 600-800°C for 1-10 hours when the molded body is heated from a room temperature to a sintering temperature, and a step for heating the molded body from the retention temperature to the sintering temperature at a rate of 0.2-2.0°C/min, and a step for sintering the molded body at 1,350-1,500°C for 1-100 hours.SELECTED DRAWING: None
【課題】焼結体の反りが少なく、反り低減のための研削によるバルク抵抗率の面内ばらつきが抑制された酸化インジウム−酸化亜鉛系酸化物（ＩＺＯ）焼結体ターゲット及びその製造方法を提供する。【解決手段】ＺｎとＩｎの原子比が０．０５≦Ｚｎ／（Ｉｎ＋Ｚｎ）≦０．３０を満たし、該ターゲットのスパッタ面におけるバルク抵抗率の標準偏差が０．１ｍΩ・ｃｍ以下であるスパッタリングターゲットであって、原料粉末をプレス成形した成形体を室温から焼結温度まで昇温する工程において、途中保持温度を６００〜８００℃とし、１〜１０時間保持する工程、当該途中保持温度から焼結温度まで０．２〜２．０℃／ｍｉｎで昇温する工程、焼結温度を１３５０〜１５００℃とし、焼結保持時間を１〜１００時間で焼結するＩＺＯ焼結体からなるスパッタリングターゲットの製造方法。【選択図】なし
INDIUM OXIDE-ZINC OXIDE (IZO)-BASED SPUTTERING TARGET
PROBLEM TO BE SOLVED: To provide an indium oxide-zinc oxide (IZO)-based sintering target of which the sintering body has a small warp and which has suppressed in-plane scattering of a bulk resistivity caused by grinding for warp reduction, and a production method thereof.SOLUTION: A sputtering target has an atom ratio of 0.05≤Zn/(In+Zn)≤0.30 and a standard deviation of a bulk resistivity of 0.1 mΩ cm or less in a sputtering plane of the target. A production method of the sputtering target made of an IZO sintering body includes a step for retaining the temperature of a molded body obtained by press-molding raw material powder at 600-800°C for 1-10 hours when the molded body is heated from a room temperature to a sintering temperature, and a step for heating the molded body from the retention temperature to the sintering temperature at a rate of 0.2-2.0°C/min, and a step for sintering the molded body at 1,350-1,500°C for 1-100 hours.SELECTED DRAWING: None
【課題】焼結体の反りが少なく、反り低減のための研削によるバルク抵抗率の面内ばらつきが抑制された酸化インジウム−酸化亜鉛系酸化物（ＩＺＯ）焼結体ターゲット及びその製造方法を提供する。【解決手段】ＺｎとＩｎの原子比が０．０５≦Ｚｎ／（Ｉｎ＋Ｚｎ）≦０．３０を満たし、該ターゲットのスパッタ面におけるバルク抵抗率の標準偏差が０．１ｍΩ・ｃｍ以下であるスパッタリングターゲットであって、原料粉末をプレス成形した成形体を室温から焼結温度まで昇温する工程において、途中保持温度を６００〜８００℃とし、１〜１０時間保持する工程、当該途中保持温度から焼結温度まで０．２〜２．０℃／ｍｉｎで昇温する工程、焼結温度を１３５０〜１５００℃とし、焼結保持時間を１〜１００時間で焼結するＩＺＯ焼結体からなるスパッタリングターゲットの製造方法。【選択図】なし
INDIUM OXIDE-ZINC OXIDE (IZO)-BASED SPUTTERING TARGET
酸化インジウム−酸化亜鉛系（ＩＺＯ）スパッタリングターゲット
KAKENO TAKASHI (author)
2017-10-05
Patent
Electronic Resource
Japanese
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