A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Breakdown voltage reduction in I-MOS devices
Four-stage strategy has been confirmed to reduce the breakdown voltage of 70-nm impact-ionization MOS (I-MOS) devices. Simulation results showed that it was difficult to reduce the breakdown voltage below -5 V only by scaling down some device parameters such as LI, xj,se, and tox. Thus, a strained SOI (SSOI) substrate is introduced which has narrow EG. Though it consists of pure silicon, when strain is maximized, it is observed that the breakdown voltage reaches -1.25 V, which is much lower than that of GOI substrate.
Breakdown voltage reduction in I-MOS devices
Four-stage strategy has been confirmed to reduce the breakdown voltage of 70-nm impact-ionization MOS (I-MOS) devices. Simulation results showed that it was difficult to reduce the breakdown voltage below -5 V only by scaling down some device parameters such as LI, xj,se, and tox. Thus, a strained SOI (SSOI) substrate is introduced which has narrow EG. Though it consists of pure silicon, when strain is maximized, it is observed that the breakdown voltage reaches -1.25 V, which is much lower than that of GOI substrate.
Breakdown voltage reduction in I-MOS devices
Woo Young Choi, (author) / Jae Young Song, (author) / Jong Pil Kim, (author) / Sang Wan Kim, (author) / Jong Duk Lee, (author) / Byung-Gook Park, (author)
2006-10-01
304844 byte
Conference paper
Electronic Resource
English
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