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Sensitization of Er by Si-nanoclusters in Erbium doped Si-rich Si nitride films

Moon-Seung Yang, / Jung H. Shin, / Kyung Joong Kim,

Er³⁺ luminescent properties from Erbium doped Sirich Si nitride (SRSN) films were investigated through photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). These films grown by ultra-high vacuum ion beam sputtering are annealed at high temperature in order to form the Si-nanoclusters (nc-Si). We find that nc-Si can act as efficient sensitizers for Er³⁺, displaying the strong energy transfer form nc-Si to Er ions. Er³⁺ luminescence lifetimes were in the 1–3 msec range at room temperature with complete suppression of temperature quenching of Er³⁺ intensity, indicating high luminescence efficiency as well. The PLE spectrum in film with nc-Si shows efficient Er³⁺ PL intensity, compared with that of pure nitride. These results imply that Er doped SRSN is a promising alternative for compact, highefficiency Si based light sources.

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Sensitization of Er by Si-nanoclusters in Erbium doped Si-rich Si nitride films

Moon-Seung Yang, / Jung H. Shin, / Kyung Joong Kim,

Er³⁺ luminescent properties from Erbium doped Sirich Si nitride (SRSN) films were investigated through photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). These films grown by ultra-high vacuum ion beam sputtering are annealed at high temperature in order to form the Si-nanoclusters (nc-Si). We find that nc-Si can act as efficient sensitizers for Er³⁺, displaying the strong energy transfer form nc-Si to Er ions. Er³⁺ luminescence lifetimes were in the 1–3 msec range at room temperature with complete suppression of temperature quenching of Er³⁺ intensity, indicating high luminescence efficiency as well. The PLE spectrum in film with nc-Si shows efficient Er³⁺ PL intensity, compared with that of pure nitride. These results imply that Er doped SRSN is a promising alternative for compact, highefficiency Si based light sources.

Sensitization of Er by Si-nanoclusters in Erbium doped Si-rich Si nitride films

Moon-Seung Yang, / Jung H. Shin, / Kyung Joong Kim,

Er³⁺ luminescent properties from Erbium doped Sirich Si nitride (SRSN) films were investigated through photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). These films grown by ultra-high vacuum ion beam sputtering are annealed at high temperature in order to form the Si-nanoclusters (nc-Si). We find that nc-Si can act as efficient sensitizers for Er³⁺, displaying the strong energy transfer form nc-Si to Er ions. Er³⁺ luminescence lifetimes were in the 1–3 msec range at room temperature with complete suppression of temperature quenching of Er³⁺ intensity, indicating high luminescence efficiency as well. The PLE spectrum in film with nc-Si shows efficient Er³⁺ PL intensity, compared with that of pure nitride. These results imply that Er doped SRSN is a promising alternative for compact, highefficiency Si based light sources.

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Title:

Sensitization of Er by Si-nanoclusters in Erbium doped Si-rich Si nitride films

Contributors:

Moon-Seung Yang, (author) / Jung H. Shin, (author) / Kyung Joong Kim, (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 532-533

Publication date:

2006-10-01

Size:

474546 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388888

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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