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A platform for research: civil engineering, architecture and urbanism
Electrical characteristics of nano-crystal Si particles for nano floating gate memory
Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1∼5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
Electrical characteristics of nano-crystal Si particles for nano floating gate memory
Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1∼5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
Electrical characteristics of nano-crystal Si particles for nano floating gate memory
Jin Seok Yang, (author) / Seong-Il Kim, (author) / Yong Tae Kim, (author) / Woon Jo Cho, (author) / Jung Ho Park, (author)
2006-10-01
460768 byte
Conference paper
Electronic Resource
English
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