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Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
Muraguchi, M. (author) / Sakurai, Y. (author) / Takada, Y. (author) / Shigeta, Y. (author) / Ikeda, M. (author) / Makihara, K. (author) / Miyazaki, S. (author) / Nomura, S. (author) / Shiraishi, K. (author) / Endoh, T. (author)
2011-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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