A platform for research: civil engineering, architecture and urbanism
Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed
Copper nanowires (CuNWs) were grown by chemical vapor deposition using Cu(etac)[P(OEt)3]2 as the precursor. The structure of the CuNWs was a five-fold twinned crystal with a pentagonal-pyramid edge tip. The length of the CuNWs was around 5-10 μm and the diameter was in the range of 100-200 nm depending on the growth conditions. The phosphite ligands passivated the (001) side faces of the CuNWs and only the (111) faces grew, resulting in 1-dimensional copper wires.
Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed
Copper nanowires (CuNWs) were grown by chemical vapor deposition using Cu(etac)[P(OEt)3]2 as the precursor. The structure of the CuNWs was a five-fold twinned crystal with a pentagonal-pyramid edge tip. The length of the CuNWs was around 5-10 μm and the diameter was in the range of 100-200 nm depending on the growth conditions. The phosphite ligands passivated the (001) side faces of the CuNWs and only the (111) faces grew, resulting in 1-dimensional copper wires.
Transmission electron microscopy analysis of freestanding copper nanowires grown by chemical vapor deposition with no template or seed
Changwook Kim, (author) / Sangho Lim, (author) / Martha Briceno, (author) / Ian M. Robertson, (author) / Hyungsoo Choi, (author) / Kyekyoon Kim, (author)
2006-10-01
713972 byte
Conference paper
Electronic Resource
English
Copper Nanowires with a Five-Twinned Structure Grown by Chemical Vapor Deposition
British Library Online Contents | 2008
|British Library Online Contents | 1998
|British Library Online Contents | 2014
|SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
British Library Online Contents | 2010
|