A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Switching characteristics in the ferroelectric organic molecular memories
Organic molecular memories are expected to become one of the essential key devices in the next-generation flexible digital instruments, and in this paper a novel non-volatile organic memory will be introduced. It is shown that the polarization switching characteristics in the ferroelectric films of vinylidene fluoride (VDF) oligomer and P(VDF/TrFE) copolymer change with their structural factors such as crystallinity and chain length of the materials, and the switching time becomes shorter and shorter with increasing applied electric field and reaches in the order of nano-second. Moreover, the possibilities of the application of such thin organic ferroelectric films to an infrared image sensor as well as the creation of the ultra high-density molecular memory by utilizing recent scanning probe microscopy (SPM) technique will be discussed.
Switching characteristics in the ferroelectric organic molecular memories
Organic molecular memories are expected to become one of the essential key devices in the next-generation flexible digital instruments, and in this paper a novel non-volatile organic memory will be introduced. It is shown that the polarization switching characteristics in the ferroelectric films of vinylidene fluoride (VDF) oligomer and P(VDF/TrFE) copolymer change with their structural factors such as crystallinity and chain length of the materials, and the switching time becomes shorter and shorter with increasing applied electric field and reaches in the order of nano-second. Moreover, the possibilities of the application of such thin organic ferroelectric films to an infrared image sensor as well as the creation of the ultra high-density molecular memory by utilizing recent scanning probe microscopy (SPM) technique will be discussed.
Switching characteristics in the ferroelectric organic molecular memories
H. Uemura, (author) / S. Horie, (author) / K. Noda, (author) / S. Kuwajima, (author) / K. Ishida, (author) / T. Horiuchi, (author) / K. Matsushige, (author)
2006-10-01
425071 byte
Conference paper
Electronic Resource
English
Organic ferroelectric opto-electronic memories
| British Library Online Contents | 2011
British Library Online Contents | 2003
| British Library Online Contents | 2018
Multilevel Information Storage in Ferroelectric Polymer Memories
| British Library Online Contents | 2011
Direct Observations of Retention Failure in Ferroelectric Memories
| British Library Online Contents | 2012