Direct Observations of Retention Failure in Ferroelectric Memories: Fid-Bau Portal

Direct Observations of Retention Failure in Ferroelectric Memories

Gao, P. / Nelson, C. T. / Jokisaari, J. R. / Zhang, Y. / Baek, S. H. / Bark, C. W. / Wang, E. / Liu, Y. / Li, J. / Eom, C. B.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Direct Observations of Retention Failure in Ferroelectric Memories

Gao, P. / Nelson, C. T. / Jokisaari, J. R. / Zhang, Y. / Baek, S. H. / Bark, C. W. / Wang, E. / Liu, Y. / Li, J. / Eom, C. B.

Direct Observations of Retention Failure in Ferroelectric Memories

Gao, P. / Nelson, C. T. / Jokisaari, J. R. / Zhang, Y. / Baek, S. H. / Bark, C. W. / Wang, E. / Liu, Y. / Li, J. / Eom, C. B.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Direct Observations of Retention Failure in Ferroelectric Memories

Contributors:

Gao, P. (author) / Nelson, C. T. (author) / Jokisaari, J. R. (author) / Zhang, Y. (author) / Baek, S. H. (author) / Bark, C. W. (author) / Wang, E. (author) / Liu, Y. (author) / Li, J. (author) / Eom, C. B. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 24 ; 1106-1110

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Asadi, K. / Li, M. / Blom, P.W.M. et al. | British Library Online Contents | 2011

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transmitters

Mikolajick, Thomas / Slesazeck, Stefan / Park, Min Hyuk et al. | British Library Online Contents | 2018

Multilevel Information Storage in Ferroelectric Polymer Memories

Tripathi, A. K. / van Breemen, A. J. / Shen, J. et al. | British Library Online Contents | 2011

Switching characteristics in the ferroelectric organic molecular memories

H. Uemura, / S. Horie, / K. Noda, et al. | IEEE | 2006

Retention characteristics of Ge-nanocrystal nonvolatile MOS memories

Oh, J.S. / Oh, H.T. / Lee, Y.H. et al. | IEEE | 2006