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Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Sung Hyun Jo, / Wei Lu,

Nanoscale Ag/a-Si:H/c-Si based resistive switching nonvolatile memory devices have been fabricated and examined with active areas down to 50×50 nm². Close to 100% device yield was achieved without high voltage forming. The on/off resistance ratio increases as the device size is reduced, while the on-state resistance is insensitive to the device size down the smallest scales. This nanoscale resistive switching structure offers the potential as ultra-high density crossbar non-volatile memory devices. In the on-state, a rectifying I-V behavior was observed, a property desirable for large scale integration.

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Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Sung Hyun Jo, / Wei Lu,

Nanoscale Ag/a-Si:H/c-Si based resistive switching nonvolatile memory devices have been fabricated and examined with active areas down to 50×50 nm². Close to 100% device yield was achieved without high voltage forming. The on/off resistance ratio increases as the device size is reduced, while the on-state resistance is insensitive to the device size down the smallest scales. This nanoscale resistive switching structure offers the potential as ultra-high density crossbar non-volatile memory devices. In the on-state, a rectifying I-V behavior was observed, a property desirable for large scale integration.

Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Sung Hyun Jo, / Wei Lu,

Nanoscale Ag/a-Si:H/c-Si based resistive switching nonvolatile memory devices have been fabricated and examined with active areas down to 50×50 nm². Close to 100% device yield was achieved without high voltage forming. The on/off resistance ratio increases as the device size is reduced, while the on-state resistance is insensitive to the device size down the smallest scales. This nanoscale resistive switching structure offers the potential as ultra-high density crossbar non-volatile memory devices. In the on-state, a rectifying I-V behavior was observed, a property desirable for large scale integration.

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Title:

Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Contributors:

Sung Hyun Jo, (author) / Wei Lu, (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 116-117

Publication date:

2006-10-01

Size:

321504 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388711

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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