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Optical gain gradient under electric field on GaAsSb/InAs heterostructure
This article reports the change in band alignment and gradient of optical characteristics (i.e. gradient of optical gain and transition wavelength) of the type-II GaAsSb/InAs/AlSb W-shaped – heterostructure having double quantum wells (DQWs) under applied dc electric field. The quantum wells width was kept as ~ 20 nm. The range of applied electric field was kept from 20 kV/cm to 100 kV/cm. In results, it is found that for the applied variable electric field, the optical gain as well as optical wavelength both changes significantly. For the applied dc electric field up to 50 kV/cm, the gain gradient is found positive after that it becomes negative. The results are novel and claim the usage of such heterostructure as tunable light source with high optical gain.
Optical gain gradient under electric field on GaAsSb/InAs heterostructure
This article reports the change in band alignment and gradient of optical characteristics (i.e. gradient of optical gain and transition wavelength) of the type-II GaAsSb/InAs/AlSb W-shaped – heterostructure having double quantum wells (DQWs) under applied dc electric field. The quantum wells width was kept as ~ 20 nm. The range of applied electric field was kept from 20 kV/cm to 100 kV/cm. In results, it is found that for the applied variable electric field, the optical gain as well as optical wavelength both changes significantly. For the applied dc electric field up to 50 kV/cm, the gain gradient is found positive after that it becomes negative. The results are novel and claim the usage of such heterostructure as tunable light source with high optical gain.
Optical gain gradient under electric field on GaAsSb/InAs heterostructure
Kattavat, Sandhya (author) / Quraishi, A. M. (author) / Kumar, Kuldeep (author) / Josey, Smitha (author) / Alvi, Parvez Ahmad (author) / Haider, Syed Firoz (author)
2023-02-20
354372 byte
Conference paper
Electronic Resource
English
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