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Effect of Doped Barrier on Performance of GaAsSb/InGaAs QW Heterostructure

Kattayat, Sandhya / Quraishi, A. M. / Kumawat, Kajal / Josey, Smitha / Alvi, Parvez Ahmad / Singh, A. K.

In this article, we report the effect of p- type doped barrier on the absorption spectra of type-II asymmetric-heterostructure constituted of InGaAs and GaAsSb layers which contains the double quantum wells (DQWs). The effect has been studied on the band alignment, wavefunctions, energy states and finally optical absorption spectra. The absorption spectra have also been compared for the structures having undoped and doped barrier layer of GaAsSb material. It is found that the peak absorption is enhanced significantly in the SWIR region on p-type doping in barrier region with the concentration of 2 ×10¹⁸cm⁻³.

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Effect of Doped Barrier on Performance of GaAsSb/InGaAs QW Heterostructure

Kattayat, Sandhya / Quraishi, A. M. / Kumawat, Kajal / Josey, Smitha / Alvi, Parvez Ahmad / Singh, A. K.

In this article, we report the effect of p- type doped barrier on the absorption spectra of type-II asymmetric-heterostructure constituted of InGaAs and GaAsSb layers which contains the double quantum wells (DQWs). The effect has been studied on the band alignment, wavefunctions, energy states and finally optical absorption spectra. The absorption spectra have also been compared for the structures having undoped and doped barrier layer of GaAsSb material. It is found that the peak absorption is enhanced significantly in the SWIR region on p-type doping in barrier region with the concentration of 2 ×10¹⁸cm⁻³.

Effect of Doped Barrier on Performance of GaAsSb/InGaAs QW Heterostructure

Kattayat, Sandhya / Quraishi, A. M. / Kumawat, Kajal / Josey, Smitha / Alvi, Parvez Ahmad / Singh, A. K.

In this article, we report the effect of p- type doped barrier on the absorption spectra of type-II asymmetric-heterostructure constituted of InGaAs and GaAsSb layers which contains the double quantum wells (DQWs). The effect has been studied on the band alignment, wavefunctions, energy states and finally optical absorption spectra. The absorption spectra have also been compared for the structures having undoped and doped barrier layer of GaAsSb material. It is found that the peak absorption is enhanced significantly in the SWIR region on p-type doping in barrier region with the concentration of 2 ×10¹⁸cm⁻³.

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Title:

Effect of Doped Barrier on Performance of GaAsSb/InGaAs QW Heterostructure

Contributors:

Kattayat, Sandhya (author) / Quraishi, A. M. (author) / Kumawat, Kajal (author) / Josey, Smitha (author) / Alvi, Parvez Ahmad (author) / Singh, A. K. (author)

Published in:

2024 Advances in Science and Engineering Technology International Conferences (ASET) ; 01-04

Publication date:

2024-06-03

Size:

379678 byte

ISBN:

979-8-3503-4413-4

ISSN:

DOI:

https://doi.org/10.1109/ASET60340.2024.10708726

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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