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    Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

    New search for: J. F. Geisz

    Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

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    Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

    New search for: J. F. Geisz

    Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

    Access

    Access via TIB
    Check availability in my library

    Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

    New search for: J. F. Geisz

    Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

    Access

    Access via TIB
    Check availability in my library

    Access

    Access via TIB
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    Document information
    Similar titles

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    Document information
    Title:

    Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

    Contributors:

    J. F. Geisz (author)

    Publication date:

    2001

    Size:

    4 pages

    Type of media:

    Report

    Type of material:

    No indication

    Language:

    English

    Keywords:

    Solar Energy , Solid State Physics , Meetings , Epitaxial growth , Solar cells , Alloys , Chemical vaport deposition , Dibornes , Hydrogen , Galium , Boron , Triethylboron , Boron trifluorides , Trimethylboron

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