Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint: Fid-Bau Portal

Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

J. F. Geisz

Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

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Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

J. F. Geisz

Abstract

Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

J. F. Geisz

Abstract

Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.

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Titel:

Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

Beteiligte:

J. F. Geisz (Autor:in)

Erscheinungsdatum:

2001

Format / Umfang:

4 pages

Medientyp:

Report

Format:

Keine Angabe

Sprache:

Englisch

Schlagwörter:

Solar Energy , Solid State Physics , Meetings , Epitaxial growth , Solar cells , Alloys , Chemical vaport deposition , Dibornes , Hydrogen , Galium , Boron , Triethylboron , Boron trifluorides , Trimethylboron

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