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Deposition of Silicon on Insulating Substrates
The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of silicon films on various substrates, with one objective being to minimize autodoping and diffusion effects. The substrates included brace 111 brace oriented silicon, brace 001 brace oriented alpha-silicon carbide, brace 001 brace oriented sapphire, brace 111 brace oriented lanthanum aluminate, brace 110 brace oriented spinel, brace 111 brace oriented thorium dioxide, brace 001 brace oriented zircon, and also silicon nitride and thorium dioxide films. Epitaxial growth of silicon was achieved in many cases. The nucleation, growth, and perfection of silicon films on silicon carbide substrates by the pyrolytic technique were studied in detail, and the films were found to comprise crystals of brace 111 brace and brace 110 brace epitaxial orientations. Of the substrates studied, silicon carbide was found to promote the most perfect crystal growth and, for this reason to have unique advantages for high quality silicon film growth. These films were shown to be of device quality by preparing small area diffused and epitaxial p-n junctions and MOS transistors. A masking technique was used to control the nucleation and growth of silicon films on silicon carbide substrates. Directional growth of silicon was achieved, and the epitaxial growth of brace 110 brace oriented silicon film along a <110> direction of silicon was promoted by using the mask. (Author)
Deposition of Silicon on Insulating Substrates
The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of silicon films on various substrates, with one objective being to minimize autodoping and diffusion effects. The substrates included brace 111 brace oriented silicon, brace 001 brace oriented alpha-silicon carbide, brace 001 brace oriented sapphire, brace 111 brace oriented lanthanum aluminate, brace 110 brace oriented spinel, brace 111 brace oriented thorium dioxide, brace 001 brace oriented zircon, and also silicon nitride and thorium dioxide films. Epitaxial growth of silicon was achieved in many cases. The nucleation, growth, and perfection of silicon films on silicon carbide substrates by the pyrolytic technique were studied in detail, and the films were found to comprise crystals of brace 111 brace and brace 110 brace epitaxial orientations. Of the substrates studied, silicon carbide was found to promote the most perfect crystal growth and, for this reason to have unique advantages for high quality silicon film growth. These films were shown to be of device quality by preparing small area diffused and epitaxial p-n junctions and MOS transistors. A masking technique was used to control the nucleation and growth of silicon films on silicon carbide substrates. Directional growth of silicon was achieved, and the epitaxial growth of brace 110 brace oriented silicon film along a <110> direction of silicon was promoted by using the mask. (Author)
Deposition of Silicon on Insulating Substrates
T. L. Chu (author) / M. H. Francombe (author) / G. A. Gruber (author) / J. J. Oberly (author) / R. L. Tallman (author)
1965
2 pages
Report
No indication
English
Silicon , Crystal growth , Semiconducting films , Films , Plating , Vapor plating , Vacuum apparatus , Pyrolysis , Epitaxial growth , Nucleation , Sapphires , Silanes , Silicon compounds , Carbides , Nitrides , Thorium compounds , Dioxides , Spinels , Crystals
Annealing and activation of silicon implanted in semi-insulating InP substrates
| British Library Online Contents | 2003