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Localized electron states in oxides adjacent to metals hybridize with conduction electrons forming interface states, which at the localized state have a long decay time and amplitude resonantly enhanced over the amplitude of the conduction electrons. Resonant tunneling via these interface states corresponds to slow, but band like, diffusion which is much faster than activated diffusion, where the latter diminishes for correlation (Coulomb) energies or for phonon energies much larger than the band width. These energies hinder the resonant tunneling yielding a strongly time, voltage and temperature dependent tunnel current. This transition from resonant tunneling to activated intermediate state tunneling corresponds to the metal-insulator-transition. In Ta2O5 and Nb2O5 the correlation energy is small and the band width is large and thus resonant tunneling can account for various tunnel anomalies of Ta- Ta2O5- metal or Nb - Nb2O5 - metal diodes.
Localized electron states in oxides adjacent to metals hybridize with conduction electrons forming interface states, which at the localized state have a long decay time and amplitude resonantly enhanced over the amplitude of the conduction electrons. Resonant tunneling via these interface states corresponds to slow, but band like, diffusion which is much faster than activated diffusion, where the latter diminishes for correlation (Coulomb) energies or for phonon energies much larger than the band width. These energies hinder the resonant tunneling yielding a strongly time, voltage and temperature dependent tunnel current. This transition from resonant tunneling to activated intermediate state tunneling corresponds to the metal-insulator-transition. In Ta2O5 and Nb2O5 the correlation energy is small and the band width is large and thus resonant tunneling can account for various tunnel anomalies of Ta- Ta2O5- metal or Nb - Nb2O5 - metal diodes.
Resonant Tunneling
J. Halbritter (author)
1982
19 pages
Report
No indication
English
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