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Resonant tunneling ferroelectric tunnel junction
The invention relates to a resonant tunneling ferroelectric tunnel junction. The resonant tunneling ferroelectric tunnel junction comprises a lower electrode, a first ferroelectric layer, an insulating layer, a second ferroelectric layer and an upper electrode which are stacked in sequence, wherein the thickness of the first ferroelectric layer is different from that of the second ferroelectric layer; the barrier height of the insulating layer is not only lower than the barrier height of the first ferroelectric layer, but also lower than the barrier height of the second ferroelectric layer. The invention has an asymmetric three-barrier structure which is a barrier-potential well-barrier structure, thereby introducing a resonant tunneling effect, effectively improving the on-state current, improving the tunneling resistance ratio, and solving the problem that the on-state current and the tunneling resistance ratio cannot be considered at the same time in the prior art.
本发明涉及一种共振隧穿铁电隧道结。一种共振隧穿铁电隧道结，包括依次堆叠的：下电极、第一铁电层、绝缘层、第二铁电层和上电极；其中，所述第一铁电层和所述第二铁电层的厚度不同；所述绝缘层的势垒高度既低于所述第一铁电层的势垒高度，又低于所述第二铁电层的势垒高度。本发明具有非对称的三势垒结构，并且为势垒‑势阱‑势垒结构，从而引入了共振隧穿效应，有效地提高了开态电流，同时提高隧穿电阻比值，解决了现有技术中开态电流和隧穿电阻比值不能兼顾的问题。
Resonant tunneling ferroelectric tunnel junction
The invention relates to a resonant tunneling ferroelectric tunnel junction. The resonant tunneling ferroelectric tunnel junction comprises a lower electrode, a first ferroelectric layer, an insulating layer, a second ferroelectric layer and an upper electrode which are stacked in sequence, wherein the thickness of the first ferroelectric layer is different from that of the second ferroelectric layer; the barrier height of the insulating layer is not only lower than the barrier height of the first ferroelectric layer, but also lower than the barrier height of the second ferroelectric layer. The invention has an asymmetric three-barrier structure which is a barrier-potential well-barrier structure, thereby introducing a resonant tunneling effect, effectively improving the on-state current, improving the tunneling resistance ratio, and solving the problem that the on-state current and the tunneling resistance ratio cannot be considered at the same time in the prior art.
本发明涉及一种共振隧穿铁电隧道结。一种共振隧穿铁电隧道结，包括依次堆叠的：下电极、第一铁电层、绝缘层、第二铁电层和上电极；其中，所述第一铁电层和所述第二铁电层的厚度不同；所述绝缘层的势垒高度既低于所述第一铁电层的势垒高度，又低于所述第二铁电层的势垒高度。本发明具有非对称的三势垒结构，并且为势垒‑势阱‑势垒结构，从而引入了共振隧穿效应，有效地提高了开态电流，同时提高隧穿电阻比值，解决了现有技术中开态电流和隧穿电阻比值不能兼顾的问题。
Resonant tunneling ferroelectric tunnel junction
一种共振隧穿铁电隧道结
CHANG PENGYING (author) / XIE YIYANG (author)
2023-03-24
Patent
Electronic Resource
Chinese
IPC:
H10N
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