Steering Epitaxial Growth: Fid-Bau Portal

Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

Steering Epitaxial Growth

Poelsema, Bene / Dijken, Sebastiaan

Abstract Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution. The lack of incident flux homogeneity, disregarded so far in growth studies, contributes to enhanced roughness of the growth front. This principal disadvantage can be turned around. In a quite narrow window of polar angles of incidence, it becomes possible to fabricate one-dimensional arrays of ripples oriented perpendicular to the plane of incidence. Several aspects of the mechanism, as well as an application of one-dimensional magnetic aggregates, are discussed.

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Steering Epitaxial Growth

Poelsema, Bene / Dijken, Sebastiaan

Abstract Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution. The lack of incident flux homogeneity, disregarded so far in growth studies, contributes to enhanced roughness of the growth front. This principal disadvantage can be turned around. In a quite narrow window of polar angles of incidence, it becomes possible to fabricate one-dimensional arrays of ripples oriented perpendicular to the plane of incidence. Several aspects of the mechanism, as well as an application of one-dimensional magnetic aggregates, are discussed.

Steering Epitaxial Growth

Poelsema, Bene / Dijken, Sebastiaan

Abstract Attractive dispersion forces, active between incident atoms and the substrate, cause preferential arrival of atoms on protruding parts on growing film surfaces. This phenomenon, which we refer to as “steering”, can give rise to significant flux redistribution. The lack of incident flux homogeneity, disregarded so far in growth studies, contributes to enhanced roughness of the growth front. This principal disadvantage can be turned around. In a quite narrow window of polar angles of incidence, it becomes possible to fabricate one-dimensional arrays of ripples oriented perpendicular to the plane of incidence. Several aspects of the mechanism, as well as an application of one-dimensional magnetic aggregates, are discussed.

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Document information

Title:

Steering Epitaxial Growth

Contributors:

Poelsema, Bene (author) / Dijken, Sebastiaan (author)

Published in:

Atomistic Aspects of Epitaxial Growth ; 165-184

NATO Science Series ; 65

Publication date:

2002-01-01

Size:

20 pages

ISBN:

978-94-010-0391-9 , 978-1-4020-0675-3

ISSN:

DOI:

https://doi.org/10.1007/978-94-010-0391-9_15

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Polar Angle , Magnetic Anisotropy , Grazing Incidence , Growth Front , Step Edge Physics , Physics, general , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Characterization and Evaluation of Materials , Physical Chemistry , Condensed Matter Physics

Similar titles

Evaluating epitaxial growth stability

Christensen, D. H. / Hill, J. R. / Hickernell, R. K. et al. | British Library Online Contents | 1997

MOCVD growth of non-epitaxial and epitaxial ZnS thin films

Fang, J. / Holloway, P. H. / Yu, J. E. et al. | British Library Online Contents | 1993

MOCVD growth of non-epitaxial and epitaxial ZnS thin films

Fang, J. / Holloway, P. H. / Yu, J. E. et al. | British Library Online Contents | 1993

Atomistic Aspects of Epitaxial Growth

Kotrla, Miroslav | TIBKAT | 2002

Chloride-Based SiC Epitaxial Growth

Pedersen, H. / Leone, S. / Henry, A. et al. | British Library Online Contents | 2009