A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Basic Phenomena in Reactive Etching of Materials
Abstract Plasma-induced etching of materials has become an extensively-investigated subject because of its relevance in forefront technologies such as fusion(1) and microelectronics(1). Recently, etching processes have been proven to be relevant in deposition of thin films, an example being the synthesis of diamond-like and diamond films(2). Materials exposed to plasmas during either etching or deposition processes are, in most cases, simultaneously bombarded by particles [ions/neutrals (inert and chemically active), electrons] and photons. In the case of fusion reactors, neutrons will have to be added to the list of particles. Device fabrication in microelectronics often involves the use of relatively low temperature (thousands of K) plasma discharges, which are used either to etch micron-size features or to deposit films for integrated circuits design(3); here, high erosion and deposition rates are generally desirable. Hot (hundreds of millions of K) fusion plasmas, by contrast, produce erosion of the fusion device inner walls, which is generally undesirable(4,5).
Basic Phenomena in Reactive Etching of Materials
Abstract Plasma-induced etching of materials has become an extensively-investigated subject because of its relevance in forefront technologies such as fusion(1) and microelectronics(1). Recently, etching processes have been proven to be relevant in deposition of thin films, an example being the synthesis of diamond-like and diamond films(2). Materials exposed to plasmas during either etching or deposition processes are, in most cases, simultaneously bombarded by particles [ions/neutrals (inert and chemically active), electrons] and photons. In the case of fusion reactors, neutrons will have to be added to the list of particles. Device fabrication in microelectronics often involves the use of relatively low temperature (thousands of K) plasma discharges, which are used either to etch micron-size features or to deposit films for integrated circuits design(3); here, high erosion and deposition rates are generally desirable. Hot (hundreds of millions of K) fusion plasmas, by contrast, produce erosion of the fusion device inner walls, which is generally undesirable(4,5).
Basic Phenomena in Reactive Etching of Materials
Auciello, Orlando (author)
1990-01-01
49 pages
Article/Chapter (Book)
Electronic Resource
English
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