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Schottky barriers: An effective work function model

Freeouf, J. L. / Woodall, J. M.

Abstract The experimental observations of metallurgical interactions between compound semiconductor substrates and metallic or oxide overlayers have stimulated a new model of Fermi level “pinning” at these interfaces. This model assumes the standard Schottky picture of interface band alignment, but that the interface phases involved are not the pure metal or oxide normally assumed by other models. For both III-V and II-VI compounds, the barrier height to gold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.

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Schottky barriers: An effective work function model

Freeouf, J. L. / Woodall, J. M.

Abstract The experimental observations of metallurgical interactions between compound semiconductor substrates and metallic or oxide overlayers have stimulated a new model of Fermi level “pinning” at these interfaces. This model assumes the standard Schottky picture of interface band alignment, but that the interface phases involved are not the pure metal or oxide normally assumed by other models. For both III-V and II-VI compounds, the barrier height to gold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.

Schottky barriers: An effective work function model

Freeouf, J. L. / Woodall, J. M.

Abstract The experimental observations of metallurgical interactions between compound semiconductor substrates and metallic or oxide overlayers have stimulated a new model of Fermi level “pinning” at these interfaces. This model assumes the standard Schottky picture of interface band alignment, but that the interface phases involved are not the pure metal or oxide normally assumed by other models. For both III-V and II-VI compounds, the barrier height to gold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.

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Title:

Schottky barriers: An effective work function model

Contributors:

Freeouf, J. L. (author) / Woodall, J. M. (author)

Published in:

Electronic Structure of Metal-Semiconductor Contacts ; 154-156

Perspectives in Condensed Matter Physics ; 4

Publication date:

1990-01-01

Size:

3 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_18

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Barrier Height , Work Function , Schottky Barrier , Interface Phase , Schottky Barrier Height Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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