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Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Caspersen, K. J. / Evans, J. W.

Abstract A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

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Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Caspersen, K. J. / Evans, J. W.

Abstract A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Caspersen, K. J. / Evans, J. W.

Abstract A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

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Title:

Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Contributors:

Caspersen, K. J. ( author ) / Evans, J. W. ( author )

Published in:

Atomistic Aspects of Epitaxial Growth ; 197-206

NATO Science Series ; 65

Publication date:

2002-01-01

Size:

10 pages

ISBN:

978-94-010-0391-9 , 978-1-4020-0675-3

ISSN:

DOI:

https://doi.org/10.1007/978-94-010-0391-9_17

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Film Morphology , Step Edge , Downward Transport , Mound Formation , Kink Site Electronics and Microelectronics, Instrumentation , Condensed Matter Physics , Physical Chemistry , Physics, general , Characterization and Evaluation of Materials , Physics , Surfaces and Interfaces, Thin Films

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