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Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Caspersen, K. J. / Evans, J. W.

Abstract A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

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Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Caspersen, K. J. / Evans, J. W.

Abstract A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Caspersen, K. J. / Evans, J. W.

Abstract A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

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Titel:

Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

Beteiligte:

Caspersen, K. J. (Autor:in) / Evans, J. W. (Autor:in)

Erschienen in:

Atomistic Aspects of Epitaxial Growth ; 197-206

NATO Science Series ; 65

Erscheinungsdatum:

01.01.2002

Format / Umfang:

10 pages

ISBN:

978-94-010-0391-9 , 978-1-4020-0675-3

ISSN:

DOI:

https://doi.org/10.1007/978-94-010-0391-9_17

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Step Edge , Film Morphology , Downward Transport , Kink Site , Mound Formation Physics , Physics, general , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Characterization and Evaluation of Materials , Physical Chemistry , Condensed Matter Physics

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