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Laser Chemical Vapor Deposition of Titanium Nitride and Process Diagnostics With Laser Induced Fluorescence Spectroscopy

Chen, X. / Azer, M. N. / Egland, K. M. / Mazumder, J.

Abstract With gaseous precursors of TiCl4, H2, and N2, titanium nitride (TiN) films have been deposited on Ti-6A1-4V alloy substrates by a cw CO2 laser chemical vapor deposition (LCVD) process. Transient Ti atomic concentration above the substrate is measured by laser induced fluorescence (LEF) spectroscopy. Surface temperature during deposition is obtained by multi-wavelength pyrometry. Stylus profilometry and Auger electron spectroscopy (AES) yield film growth rates and compositions. Relationships between the growth rate and TiCl4, H2, and N2 partial pressures are established, from which the rate-controlling reactions and activation energy are obtained.

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Laser Chemical Vapor Deposition of Titanium Nitride and Process Diagnostics With Laser Induced Fluorescence Spectroscopy

Chen, X. / Azer, M. N. / Egland, K. M. / Mazumder, J.

Abstract With gaseous precursors of TiCl4, H2, and N2, titanium nitride (TiN) films have been deposited on Ti-6A1-4V alloy substrates by a cw CO2 laser chemical vapor deposition (LCVD) process. Transient Ti atomic concentration above the substrate is measured by laser induced fluorescence (LEF) spectroscopy. Surface temperature during deposition is obtained by multi-wavelength pyrometry. Stylus profilometry and Auger electron spectroscopy (AES) yield film growth rates and compositions. Relationships between the growth rate and TiCl4, H2, and N2 partial pressures are established, from which the rate-controlling reactions and activation energy are obtained.

Laser Chemical Vapor Deposition of Titanium Nitride and Process Diagnostics With Laser Induced Fluorescence Spectroscopy

Chen, X. / Azer, M. N. / Egland, K. M. / Mazumder, J.

Abstract With gaseous precursors of TiCl4, H2, and N2, titanium nitride (TiN) films have been deposited on Ti-6A1-4V alloy substrates by a cw CO2 laser chemical vapor deposition (LCVD) process. Transient Ti atomic concentration above the substrate is measured by laser induced fluorescence (LEF) spectroscopy. Surface temperature during deposition is obtained by multi-wavelength pyrometry. Stylus profilometry and Auger electron spectroscopy (AES) yield film growth rates and compositions. Relationships between the growth rate and TiCl4, H2, and N2 partial pressures are established, from which the rate-controlling reactions and activation energy are obtained.

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Title:

Laser Chemical Vapor Deposition of Titanium Nitride and Process Diagnostics With Laser Induced Fluorescence Spectroscopy

Contributors:

Chen, X. (author) / Azer, M. N. (author) / Egland, K. M. (author) / Mazumder, J. (author)

Published in:

Laser Processing: Surface Treatment and Film Deposition ; 693-701

NATO ASI Series ; 307

Publication date:

1996-01-01

Size:

9 pages

ISBN:

978-94-009-0197-1 , 978-94-010-6572-6

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0197-1_35

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Physics , Physics, general , Surfaces and Interfaces, Thin Films , Optics, Lasers, Photonics, Optical Devices , Characterization and Evaluation of Materials

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