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Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS
Abstract It is well known that the silicon nitride film can be used as a passive film in IC technology. Since 1980 the structure of silicon nitride layers has been studied by several groups [1,2,3]. In this paper, the nitridation structure of the Si(111) surface has been investigated by LEED, AES and EELFS, a technique developed by DE CRESCENZI et al. [4]. Based on the experimental results of EELFS, a new structure model for the nitridation structure of Si(111) surface is proposed.
Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS
Abstract It is well known that the silicon nitride film can be used as a passive film in IC technology. Since 1980 the structure of silicon nitride layers has been studied by several groups [1,2,3]. In this paper, the nitridation structure of the Si(111) surface has been investigated by LEED, AES and EELFS, a technique developed by DE CRESCENZI et al. [4]. Based on the experimental results of EELFS, a new structure model for the nitridation structure of Si(111) surface is proposed.
Studies of the High Temperature Nitridation Structures of the Si(111) Surface by LEED, AES and EELFS
Wang, Hongchuan (author) / Lin, Rongfu (author) / Wang, Xun (author)
1988-01-01
3 pages
Article/Chapter (Book)
Electronic Resource
English
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