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Defect Production and Stoichiometry in A-15 Superconductors

Poate, J. M. / Dynes, R. C. / Testardi, L. R. / Hammond, R. H.

Abstract The dependence of Tc upon stoichiometry and 2 MeV 4He induced damage has been investigated in Nb3Ge, Nb3Sn, V3Si and V3Ge super-conducting thin films. Optimum values of Tc are obtained for Nb:Ge and Nb:Sn ratios throughout the range of 2.6:1 – 3:1 in 95% single phase A-15 films. This is inconsistent with anti-structure (anti-site) defects leading to great degradations in T. Similar Tc vs 4He dose plots are observed for all materials; at high doses Tc saturates at values of 3.5 K (Nb3Ge), 2.95 K (Nb3Sn), 2.2 K (V3Si) and 1.0 K (V3Ge). Defects introduced by the 4He bombardment produce Tc-resistance ratio correlations similar to that for as-grown films.

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Defect Production and Stoichiometry in A-15 Superconductors

Poate, J. M. / Dynes, R. C. / Testardi, L. R. / Hammond, R. H.

Abstract The dependence of Tc upon stoichiometry and 2 MeV 4He induced damage has been investigated in Nb3Ge, Nb3Sn, V3Si and V3Ge super-conducting thin films. Optimum values of Tc are obtained for Nb:Ge and Nb:Sn ratios throughout the range of 2.6:1 – 3:1 in 95% single phase A-15 films. This is inconsistent with anti-structure (anti-site) defects leading to great degradations in T. Similar Tc vs 4He dose plots are observed for all materials; at high doses Tc saturates at values of 3.5 K (Nb3Ge), 2.95 K (Nb3Sn), 2.2 K (V3Si) and 1.0 K (V3Ge). Defects introduced by the 4He bombardment produce Tc-resistance ratio correlations similar to that for as-grown films.

Defect Production and Stoichiometry in A-15 Superconductors

Poate, J. M. / Dynes, R. C. / Testardi, L. R. / Hammond, R. H.

Abstract The dependence of Tc upon stoichiometry and 2 MeV 4He induced damage has been investigated in Nb3Ge, Nb3Sn, V3Si and V3Ge super-conducting thin films. Optimum values of Tc are obtained for Nb:Ge and Nb:Sn ratios throughout the range of 2.6:1 – 3:1 in 95% single phase A-15 films. This is inconsistent with anti-structure (anti-site) defects leading to great degradations in T. Similar Tc vs 4He dose plots are observed for all materials; at high doses Tc saturates at values of 3.5 K (Nb3Ge), 2.95 K (Nb3Sn), 2.2 K (V3Si) and 1.0 K (V3Ge). Defects introduced by the 4He bombardment produce Tc-resistance ratio correlations similar to that for as-grown films.

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Title:

Defect Production and Stoichiometry in A-15 Superconductors

Contributors:

Poate, J. M. (author) / Dynes, R. C. (author) / Testardi, L. R. (author) / Hammond, R. H. (author)

Published in:

Superconductivity in d- and f-Band Metals ; 489-505

Publication date:

1976-01-01

Size:

17 pages

ISBN:

978-1-4615-8797-2 , 978-1-4615-8795-8

DOI:

https://doi.org/10.1007/978-1-4615-8795-8_29

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Resistance Ratio , Defect Production , Collision Cascade , Neutron Damage , Antistructure Defect Physics , Strongly Correlated Systems, Superconductivity , Characterization and Evaluation of Materials

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