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Defect Production and Stoichiometry in A-15 Superconductors
Abstract The dependence of Tc upon stoichiometry and 2 MeV 4He induced damage has been investigated in Nb3Ge, Nb3Sn, V3Si and V3Ge super-conducting thin films. Optimum values of Tc are obtained for Nb:Ge and Nb:Sn ratios throughout the range of 2.6:1 – 3:1 in 95% single phase A-15 films. This is inconsistent with anti-structure (anti-site) defects leading to great degradations in T. Similar Tc vs 4He dose plots are observed for all materials; at high doses Tc saturates at values of 3.5 K (Nb3Ge), 2.95 K (Nb3Sn), 2.2 K (V3Si) and 1.0 K (V3Ge). Defects introduced by the 4He bombardment produce Tc-resistance ratio correlations similar to that for as-grown films.
Defect Production and Stoichiometry in A-15 Superconductors
Abstract The dependence of Tc upon stoichiometry and 2 MeV 4He induced damage has been investigated in Nb3Ge, Nb3Sn, V3Si and V3Ge super-conducting thin films. Optimum values of Tc are obtained for Nb:Ge and Nb:Sn ratios throughout the range of 2.6:1 – 3:1 in 95% single phase A-15 films. This is inconsistent with anti-structure (anti-site) defects leading to great degradations in T. Similar Tc vs 4He dose plots are observed for all materials; at high doses Tc saturates at values of 3.5 K (Nb3Ge), 2.95 K (Nb3Sn), 2.2 K (V3Si) and 1.0 K (V3Ge). Defects introduced by the 4He bombardment produce Tc-resistance ratio correlations similar to that for as-grown films.
Defect Production and Stoichiometry in A-15 Superconductors
Poate, J. M. (Autor:in) / Dynes, R. C. (Autor:in) / Testardi, L. R. (Autor:in) / Hammond, R. H. (Autor:in)
01.01.1976
17 pages
Aufsatz/Kapitel (Buch)
Elektronische Ressource
Englisch
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