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Surface State Electrons: Transport Through Dangling Bonds on Silicon, and Scattering and Confinement on Metals
Abstract Scanning tunneling microscopy (STM) and spectroscopy (STS) [1] continue to find new applications. They are currently used to probe at the atomic scale, metals, semiconductors, superconductors, molecular and biological systems, and adsorbed layers [2]. Here we present two new applications in the study of two-and lower-dimensional electron systems involving electrons in surface states of semiconductors and metals. First, STM tip-sample electrical point-contacts are used to probe for electron transport among the dangling-bond states of Si(111)-7x7, and study the electrical properties of model nanostructures. Then, we show how one can take advantage of the wave character of the electron and use electron interference effects to study the interaction of the quasi-two-dimensional free-electron gas (2DFEG) formed by Shockley metal surface states with individual surface steps and adsorbed atoms. We use spatiallyresolved surface state spectroscopy to probe: the electronic structure of the steps, bulk-surface state mixing near them, the nature of the images of adsorbed atoms, and their interaction with surface states. Finally, we use the fact that surface steps act as barriers for electrons to confine them, form lowerdimensionality structures, and observe quantum size effects at room temperature.
Surface State Electrons: Transport Through Dangling Bonds on Silicon, and Scattering and Confinement on Metals
Abstract Scanning tunneling microscopy (STM) and spectroscopy (STS) [1] continue to find new applications. They are currently used to probe at the atomic scale, metals, semiconductors, superconductors, molecular and biological systems, and adsorbed layers [2]. Here we present two new applications in the study of two-and lower-dimensional electron systems involving electrons in surface states of semiconductors and metals. First, STM tip-sample electrical point-contacts are used to probe for electron transport among the dangling-bond states of Si(111)-7x7, and study the electrical properties of model nanostructures. Then, we show how one can take advantage of the wave character of the electron and use electron interference effects to study the interaction of the quasi-two-dimensional free-electron gas (2DFEG) formed by Shockley metal surface states with individual surface steps and adsorbed atoms. We use spatiallyresolved surface state spectroscopy to probe: the electronic structure of the steps, bulk-surface state mixing near them, the nature of the images of adsorbed atoms, and their interaction with surface states. Finally, we use the fact that surface steps act as barriers for electrons to confine them, form lowerdimensionality structures, and observe quantum size effects at room temperature.
Surface State Electrons: Transport Through Dangling Bonds on Silicon, and Scattering and Confinement on Metals
Avouris, PH. (author) / Lyo, I.-W. (author) / Hasegawa, Y. (author)
1997-01-01
23 pages
Article/Chapter (Book)
Electronic Resource
English
Surface State , Scanning Tunneling Microscopy , Scanning Tunneling Microscopy Image , Surface Step , Unoccupied State Physics , Condensed Matter Physics , Surfaces and Interfaces, Thin Films , Physical Chemistry , Characterization and Evaluation of Materials , Measurement Science and Instrumentation
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