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RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE

Larsen, P. K. / Joyce, B. A. / Dobson, P. J.

The electronic and crystallographic structure of semiconductor surfaces and interfaces is important not only fundamentally but also practically for the emerging range of low-dimensionality device structures [1]. The growth technique of molecular beam epitaxy (MBE) based on ultra high vacuum has been used successfully in both areas and it has been demonstrated that film properties can be related to surface conditions during growth [2] .

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RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE

Larsen, P. K. / Joyce, B. A. / Dobson, P. J.

The electronic and crystallographic structure of semiconductor surfaces and interfaces is important not only fundamentally but also practically for the emerging range of low-dimensionality device structures [1]. The growth technique of molecular beam epitaxy (MBE) based on ultra high vacuum has been used successfully in both areas and it has been demonstrated that film properties can be related to surface conditions during growth [2] .

RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE

Larsen, P. K. / Joyce, B. A. / Dobson, P. J.

The electronic and crystallographic structure of semiconductor surfaces and interfaces is important not only fundamentally but also practically for the emerging range of low-dimensionality device structures [1]. The growth technique of molecular beam epitaxy (MBE) based on ultra high vacuum has been used successfully in both areas and it has been demonstrated that film properties can be related to surface conditions during growth [2] .

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Title:

RHEED and Photoemission Studies of Semiconductors Grown in-situ by MBE

Contributors:

Nizzoli, Fabrizio (editor) / Rieder, Karl-Heinz (editor) / Willis, Roy F. (editor) / Larsen, P. K. (author) / Joyce, B. A. (author) / Dobson, P. J. (author)

Published in:

Dynamical Phenomena at Surfaces, Interfaces and Superlattices ; Chapter: 21 ; 196-219

Springer Series in Surface Sciences ; 3

Publication date:

1985-01-01

Size:

24 pages

ISBN:

978-3-642-82535-4 , 978-3-642-82537-8

ISSN:

DOI:

https://doi.org/10.1007/978-3-642-82535-4_21

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Molecular Beam Epitaxy , Core Level , Reflection High Energy Electron Diffraction , Reflection High Energy Electron Diffraction Pattern , Ewald Sphere Physics , Surface and Interface Science, Thin Films , Surfaces and Interfaces, Thin Films , Physics and Astronomy

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