Critical Thickness Determination of II-VI Semiconductors by RHEED and X-Ray Diffraction: Fid-Bau Portal

Critical Thickness Determination of II-VI Semiconductors by RHEED and X-Ray Diffraction

Reisinger, T. / Kastner, M. J. / Wolf, K. / Steinkirchner, E.

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Critical Thickness Determination of II-VI Semiconductors by RHEED and X-Ray Diffraction

Reisinger, T. / Kastner, M. J. / Wolf, K. / Steinkirchner, E.

Critical Thickness Determination of II-VI Semiconductors by RHEED and X-Ray Diffraction

Reisinger, T. / Kastner, M. J. / Wolf, K. / Steinkirchner, E.

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Document information

Title:

Critical Thickness Determination of II-VI Semiconductors by RHEED and X-Ray Diffraction

Contributors:

Reisinger, T. (author) / Kastner, M. J. (author) / Wolf, K. (author) / Steinkirchner, E. (author) / Heinrich, H. / Mullin, J. B.

Published in:

II-VI Compounds and Semi-magnetic Semiconductors ; 147

MATERIALS SCIENCE FORUM

Publication date:

1995-01-01

Size:

147 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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