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    Analysis of Junction-Less Triple-Material Cylindrical Surrounding Gate MOSFET

    New search for: Das, Satish Kumar
    New search for: Biswal, Sudhansu Mohan
    New search for: Swain, Sanjit Kumar
    New search for: Baral, Biswajit

    Abstract In the work purposed, the behavior of JLTMCSG MOSFET has been investigated by incorporating Dual Metals and Single Metal Gate with respect to different device parameters. The conclusion derived from the investigation reveals that DIBL can be suppressed and transportation capability of carrier can be improved by combining the advantages of junction-less architecture, gate terminal with three different material, and Cylindrical Surrounding Gate. We explore the radio frequency (RF) performance for JLTMCSG MOSFET taking in to account various figure of merits (FOMs) such as cutoff frequency fT, C-V curve, current gain, unilateral power gain and the simulated results are compared with JLDMCSG MOSFET.

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    Analysis of Junction-Less Triple-Material Cylindrical Surrounding Gate MOSFET

    New search for: Das, Satish Kumar
    New search for: Biswal, Sudhansu Mohan
    New search for: Swain, Sanjit Kumar
    New search for: Baral, Biswajit

    Abstract In the work purposed, the behavior of JLTMCSG MOSFET has been investigated by incorporating Dual Metals and Single Metal Gate with respect to different device parameters. The conclusion derived from the investigation reveals that DIBL can be suppressed and transportation capability of carrier can be improved by combining the advantages of junction-less architecture, gate terminal with three different material, and Cylindrical Surrounding Gate. We explore the radio frequency (RF) performance for JLTMCSG MOSFET taking in to account various figure of merits (FOMs) such as cutoff frequency fT, C-V curve, current gain, unilateral power gain and the simulated results are compared with JLDMCSG MOSFET.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Analysis of Junction-Less Triple-Material Cylindrical Surrounding Gate MOSFET

    New search for: Das, Satish Kumar
    New search for: Biswal, Sudhansu Mohan
    New search for: Swain, Sanjit Kumar
    New search for: Baral, Biswajit

    Abstract In the work purposed, the behavior of JLTMCSG MOSFET has been investigated by incorporating Dual Metals and Single Metal Gate with respect to different device parameters. The conclusion derived from the investigation reveals that DIBL can be suppressed and transportation capability of carrier can be improved by combining the advantages of junction-less architecture, gate terminal with three different material, and Cylindrical Surrounding Gate. We explore the radio frequency (RF) performance for JLTMCSG MOSFET taking in to account various figure of merits (FOMs) such as cutoff frequency fT, C-V curve, current gain, unilateral power gain and the simulated results are compared with JLDMCSG MOSFET.

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    Title:

    Analysis of Junction-Less Triple-Material Cylindrical Surrounding Gate MOSFET

    Contributors:

    Das, Satish Kumar (author) / Biswal, Sudhansu Mohan (author) / Swain, Sanjit Kumar (author) / Baral, Biswajit (author)

    Published in:

    ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management ; 803-812

    Publication date:

    2019-06-28

    Size:

    10 pages

    ISBN:

    978-981-13-8460-8 , 978-981-13-8461-5

    DOI:

    https://doi.org/10.1007/978-981-13-8461-5_92

    Type of media:

    Article/Chapter (Book)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    Junctionless , Surrounding gate , RF performance , MOSFET , Short channel effects Engineering , Quality Control, Reliability, Safety and Risk , Performance and Reliability , Circuits and Systems , Operations Research, Management Science

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