Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi<Subscript>2</Subscript>Epitaxial Structures: Fid-Bau Portal

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Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

Tung, R. T. / Gibson, J. M. / Poate, J. M.

Abstract Continuous and planar single-crystal NiSi2films (<60 Å thick) have been grown on Si(100) and (111) by ultrahigh-vacuum techniques. Nickel deposition (<20 Å) on atomically clean Si at room temperature, followed by low-temperature heating at ~450°C, results in the growth of epitaxial NiSi2 films whose structure depends critically on the starting Ni thickness. The films are coherent, without misfit dislocations. The orientation of the (111) silicide can be controlled by the initial Ni thickness.

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Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

Tung, R. T. / Gibson, J. M. / Poate, J. M.

Abstract Continuous and planar single-crystal NiSi2films (<60 Å thick) have been grown on Si(100) and (111) by ultrahigh-vacuum techniques. Nickel deposition (<20 Å) on atomically clean Si at room temperature, followed by low-temperature heating at ~450°C, results in the growth of epitaxial NiSi2 films whose structure depends critically on the starting Ni thickness. The films are coherent, without misfit dislocations. The orientation of the (111) silicide can be controlled by the initial Ni thickness.

Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

Tung, R. T. / Gibson, J. M. / Poate, J. M.

Abstract Continuous and planar single-crystal NiSi2films (<60 Å thick) have been grown on Si(100) and (111) by ultrahigh-vacuum techniques. Nickel deposition (<20 Å) on atomically clean Si at room temperature, followed by low-temperature heating at ~450°C, results in the growth of epitaxial NiSi2 films whose structure depends critically on the starting Ni thickness. The films are coherent, without misfit dislocations. The orientation of the (111) silicide can be controlled by the initial Ni thickness.

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Title:

Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

Contributors:

Tung, R. T. (author) / Gibson, J. M. (author) / Poate, J. M. (author)

Published in:

Electronic Structure of Metal-Semiconductor Contacts ; 161-164

Perspectives in Condensed Matter Physics ; 4

Publication date:

1990-01-01

Size:

4 pages

ISBN:

978-94-010-6780-5 , 978-94-009-0657-0

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-0657-0_20

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

Misfit Dislocation , Physical Review Letter , Thin Film Interface , Thick Metal Film , Silicide Growth Physics , Physics, general , Surfaces and Interfaces, Thin Films , Physical Chemistry , Electrical Engineering , Condensed Matter Physics

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