Epitaxial growth of NiSi~2 induced by sulfur segregation at the NiSi~2/Si(100) interface: Fid-Bau Portal

Epitaxial growth of NiSi~2 induced by sulfur segregation at the NiSi~2/Si(100) interface

Zhao, Q.T. / Mi, S.B. / Jia, C.L. / Urban, C. / Sandow, C. / Habicht, S. / Mantl, S.

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Epitaxial growth of NiSi~2 induced by sulfur segregation at the NiSi~2/Si(100) interface

Zhao, Q.T. / Mi, S.B. / Jia, C.L. / Urban, C. / Sandow, C. / Habicht, S. / Mantl, S.

Epitaxial growth of NiSi~2 induced by sulfur segregation at the NiSi~2/Si(100) interface

Zhao, Q.T. / Mi, S.B. / Jia, C.L. / Urban, C. / Sandow, C. / Habicht, S. / Mantl, S.

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Title:

Epitaxial growth of NiSi~2 induced by sulfur segregation at the NiSi~2/Si(100) interface

Contributors:

Zhao, Q.T. (author) / Mi, S.B. (author) / Jia, C.L. (author) / Urban, C. (author) / Sandow, C. (author) / Habicht, S. (author) / Mantl, S. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 24 ; 135-139

Publication date:

2009-01-01

Size:

5 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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