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    Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

    New search for: Su, Meng
    New search for: Yang, Zhenyu
    New search for: Liao, Lei
    New search for: Zou, Xuming
    New search for: Ho, Johnny C.
    New search for: Wang, Jingli
    New search for: Wang, Jianlu
    New search for: Hu, Weida
    New search for: Xiao, Xiangheng
    New search for: Jiang, Changzhong
    New search for: Liu, Chuansheng
    New search for: Guo, Tailiang

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    Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

    New search for: Su, Meng
    New search for: Yang, Zhenyu
    New search for: Liao, Lei
    New search for: Zou, Xuming
    New search for: Ho, Johnny C.
    New search for: Wang, Jingli
    New search for: Wang, Jianlu
    New search for: Hu, Weida
    New search for: Xiao, Xiangheng
    New search for: Jiang, Changzhong
    New search for: Liu, Chuansheng
    New search for: Guo, Tailiang

    Access

    Download

    Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

    New search for: Su, Meng
    New search for: Yang, Zhenyu
    New search for: Liao, Lei
    New search for: Zou, Xuming
    New search for: Ho, Johnny C.
    New search for: Wang, Jingli
    New search for: Wang, Jianlu
    New search for: Hu, Weida
    New search for: Xiao, Xiangheng
    New search for: Jiang, Changzhong
    New search for: Liu, Chuansheng
    New search for: Guo, Tailiang

    Access

    Download

    Access

    Download

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    Document information
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    Document information
    Title:

    Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

    Contributors:

    Su, Meng (author) / Yang, Zhenyu (author) / Liao, Lei (author) / Zou, Xuming (author) / Ho, Johnny C. (author) / Wang, Jingli (author) / Wang, Jianlu (author) / Hu, Weida (author) / Xiao, Xiangheng (author) / Jiang, Changzhong (author)

    Published in:

    Advanced Science ; 3

    Publication date:

    2016-09-01

    Size:

    7 pages

    ISSN:

    2198-3844

    DOI:

    https://doi.org/10.1002/advs.201600078

    Type of media:

    Article (Journal)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    ferroelectric memory , P(VDF‐TrFE) , side‐gated , field‐effect transistors , In2O3 nanowires

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