Realization of Si~1~-~x~-~yGe~xC~y/Si heterostructures by pulsed-laser-induced epitaxy of C^+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) [2403-35]: Fid-Bau Portal

Realization of Si~1~-~x~-~yGe~xC~y/Si heterostructures by pulsed-laser-induced epitaxy of C^+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) [2403-35]

Boulmer, J. / Desmur-Larre, A. / Guedj, C. / Debarre, D. / SPIE

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Realization of Si~1~-~x~-~yGe~xC~y/Si heterostructures by pulsed-laser-induced epitaxy of C^+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) [2403-35]

Boulmer, J. / Desmur-Larre, A. / Guedj, C. / Debarre, D. / SPIE

Realization of Si~1~-~x~-~yGe~xC~y/Si heterostructures by pulsed-laser-induced epitaxy of C^+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) [2403-35]

Boulmer, J. / Desmur-Larre, A. / Guedj, C. / Debarre, D. / SPIE

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Titel:

Realization of Si~1~-~x~-~yGe~xC~y/Si heterostructures by pulsed-laser-induced epitaxy of C^+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) [2403-35]

Beteiligte:

Boulmer, J. (Autor:in) / Desmur-Larre, A. (Autor:in) / Guedj, C. (Autor:in) / Debarre, D. (Autor:in) / Dobowski, J. J. / SPIE

Kongress:

Conference, Laser-induced thin film processing ; 1995 ; San Jose; CA

Erschienen in:

Laser-induced thin film processing ; 362-373

PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING

Erscheinungsdatum:

01.01.1995

Format / Umfang:

12 pages

ISBN:

0819417505

ISSN:

0361-0748

Medientyp:

Aufsatz (Konferenz)

Format:

Sprache:

Englisch

Schlagwörter:

laser induced thin film processing , SPIE

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