Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Temperature Dependence and Annealing Effects of Absorption Edges for Selenium Quantum Dots Formed by Ion Implantation in Silica Glass
Temperature Dependence and Annealing Effects of Absorption Edges for Selenium Quantum Dots Formed by Ion Implantation in Silica Glass
Temperature Dependence and Annealing Effects of Absorption Edges for Selenium Quantum Dots Formed by Ion Implantation in Silica Glass
Ueda, A. (Autor:in) / Wu, M. (Autor:in) / Mu, R. (Autor:in) / Tung, Y.-S. (Autor:in) / Ma, E. / Materials Research Society
Symposium, Phase transformations and systems driven far from equilibrium ; 1997 ; Boston; MA
01.01.1998
8 pages
Held as symposium B of the 1997 MRS Fall meeting
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing
British Library Online Contents | 2009
|Chromium implantation in silica glass
British Library Online Contents | 1996
|British Library Online Contents | 2013
|Selenium calixarene for luminescent and stable quantum dots
British Library Online Contents | 2006
|Temperature dependence of spin transport by dynamic quantum dots
British Library Online Contents | 2006
|