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In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs
In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs
In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs
Ianno, N. J. (Autor:in) / Nafis, S. (Autor:in) / Snyder, P. G. (Autor:in) / Johs, B. (Autor:in)
APPLIED SURFACE SCIENCE ; 63 ; 17
01.01.1993
17 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
621.35
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High-rate electron cyclotron resonance etching of GaAs via holes
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