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Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
Goto, K. (author) / Murota, J. (author) / Ono, S. (author) / Taguchi, T.
1993-01-01
153 pages
Article (Journal)
Unknown
DDC:
620.11
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