Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs
Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs
Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs
You, H.-M. (Autor:in) / Gosele, U. M. (Autor:in) / Tan, T. Y. (Autor:in) / Taguchi, T.
01.01.1993
399 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory
| British Library Online Contents | 1994
Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
| British Library Online Contents | 2001
Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP
| British Library Online Contents | 2000
Vacancy Formation in GaAs under Different Equilibrium Conditions
| British Library Online Contents | 2004
Diffusion of vacancy-solute complexes in alloys
| British Library Online Contents | 2005