Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs: Fid-Bau Portal

Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs

You, H.-M. / Gosele, U. M. / Tan, T. Y.

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Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs

You, H.-M. / Gosele, U. M. / Tan, T. Y.

Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs

You, H.-M. / Gosele, U. M. / Tan, T. Y.

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Order at Subito €

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Document information

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Document information

Title:

Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs

Contributors:

You, H.-M. (author) / Gosele, U. M. (author) / Tan, T. Y. (author) / Taguchi, T.

Published in:

Shallow Impurities in Semiconductors ; 399

MATERIALS SCIENCE FORUM

Publication date:

1993-01-01

Size:

399 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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