Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Yang, S. U. / Jung, W. S. / Lee, I. Y. et al. | British Library Online Contents | 2014

Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP

Asamizu, H. / Yamaguchi, A. / Iguchi, Y. et al. | British Library Online Contents | 2002

Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser Processes

Nakashima, K. / Eryu, O. / Kume, T. et al. | British Library Online Contents | 1998

Landauer‐QFLPS Model for Mixed Schottky‐Ohmic Contact Two‐Dimensional Transistors

Yan, Zhao‐Yi / Hou, Zhan / Xue, Kan‐Hao et al. | Wiley | 2023

Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC

Lu, W. / Michel, J. A. / Lukehart, C. M. et al. | British Library Online Contents | 2006