Uniaxial stress effects on a Si/Si~1~-~xGe~x double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy

Gennser, U. / Zaslavsky, A. / Gruetzmacher, D. A. et al. | British Library Online Contents | 1996

n-type Si/SiGe resonant tunnelling diodes

Paul, D. J. / See, P. / Zozoulenko, I. V. et al. | British Library Online Contents | 2002

A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodes

Wang, J. / Berton, P. H. / Mori, N. et al. | British Library Online Contents | 1995

Side-gated GaAs/AlGaAs double barrier resonant tunnelling diodes formed by patterened substrate regrowth

Quierin, M. A. / Burroughes, J. H. / Grimshaw, M. P. et al. | British Library Online Contents | 1995

Bohm trajectories and their potential use for the Monte Carlo simulation of resonant tunnelling diodes

Sue, J. / Oriols, X. / Martin, F. et al. | British Library Online Contents | 1996