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Raman Study of "Boson Peak" in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
Raman Study of "Boson Peak" in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
Raman Study of "Boson Peak" in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
Ivanda, M. (Autor:in) / Desnica, U. V. (Autor:in) / Haynes, T. E. (Autor:in)
MATERIALS SCIENCE FORUM ; 1387
01.01.1993
1387 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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