Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation
Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation
Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation
Iikawa, H. (Autor:in) / Nakao, M. (Autor:in) / Izumi, K. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 19 ; 3607-3613
01.01.2004
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
British Library Online Contents | 2005
|British Library Online Contents | 1995
|British Library Online Contents | 2003
|British Library Online Contents | 2002
|Carbon nanotube formation on cobalt-implanted germanium substrate
British Library Online Contents | 1999
|